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BUL44F Fiches technique(PDF) 4 Page - ON Semiconductor |
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BUL44F Fiches technique(HTML) 4 Page - ON Semiconductor |
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4 / 10 page ![]() BUL44 BUL44F 4 Motorola Bipolar Power Transistor Device Data 300 250 200 150 100 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IC, COLLECTOR CURRENT (AMPS) 6.0 5.0 4.0 3.0 2.0 0 1.0 0.4 0.2 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IC, COLLECTOR CURRENT (AMPS) 2500 2000 1500 1000 500 0 0.4 0.8 1.2 1.6 2.0 2.4 IC, COLLECTOR CURRENT (AMPS) 250 200 150 100 50 0 IC, COLLECTOR CURRENT (AMPS) 0.4 0.8 1.2 1.6 2.0 2.4 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) hFE, FORCED GAIN 2.0 1.5 1.0 0.5 5.0 6.0 7.0 8.0 9.0 10 11 12 13 14 15 200 150 100 50 IC, COLLECTOR CURRENT (AMPS) 0.4 0.8 1.2 1.6 2.0 2.4 Figure 7. Resistive Switching, ton Figure 8. Resistive Switching, toff Figure 9. Inductive Storage Time, tsi Figure 10. Inductive Storage Time Figure 11. Inductive Switching, tc and tfi IC/IB = 5 Figure 12. Inductive Switching, tc and tfi IC/IB = 10 IC/IB = 10 IC/IB = 5 IC/IB = 5 IC/IB = 10 IC/IB = 5 IC/IB = 10 IC = 0.4 A IC = 1 A tc tfi tc tfi IB(off) = IC/2 VCC = 300 V PW = 20 µs IB(off) = IC/2 VCC = 300 V PW = 20 µs IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C |
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