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BUL44F Fiches technique(PDF) 1 Page - ON Semiconductor

No de pièce BUL44F
Description  POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS
PDF  10 Pages
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
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BUL44F Fiches technique(HTML) 1 Page - ON Semiconductor

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Motorola Bipolar Power Transistor Device Data
Designer's™ Data Sheet
SWITCHMODE™
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The BUL44/BUL44F have an applications specific state–of–the–art die designed
for use in 220 V line operated Switchmode Power supplies and electronic light
ballasts. These high voltage/high speed transistors offer the following:
• Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
• Full Characterization at 125°C
• Tight Parametric Distributions are Consistent Lot–to–Lot
• Two Package Choices: Standard TO–220 or Isolated TO–220
• BUL44F, Case 221D, is UL Recognized to 3500 VRMS: File #E69369
MAXIMUM RATINGS
Rating
Symbol
BUL44
BUL44F
Unit
Collector–Emitter Sustaining Voltage
VCEO
400
Vdc
Collector–Emitter Breakdown Voltage
VCES
700
Vdc
Emitter–Base Voltage
VEBO
9.0
Vdc
Collector Current — Continuous
— Peak(1)
IC
ICM
2.0
5.0
Adc
Base Current — Continuous
— Peak(1)
IB
IBM
1.0
2.0
Adc
RMS Isolated Voltage(2)
Test No. 1 Per Fig. 22a
(for 1 sec, R.H. < 30%,
Test No. 2 Per Fig. 22b
TC = 25°C)
Test No. 3 Per Fig. 22c
VISOL
4500
3500
1500
Volts
Total Device Dissipation
(TC = 25°C)
Derate above 25
°C
PD
50
0.4
25
0.2
Watts
W/
°C
Operating and Storage Temperature
TJ, Tstg
– 65 to 150
°C
THERMAL CHARACTERISTICS
Rating
Symbol
BUL44
BUL44F
Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θJC
R
θJA
2.5
62.5
5.0
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes:
1/8
″ from Case for 5 Seconds
TL
260
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
VCEO(sus)
400
Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
ICEO
100
µAdc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
(TC = 125°C)
Collector Cutoff Current (VCE = 500 V, VEB = 0)
(TC = 125°C)
ICES
100
500
100
µAdc
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
IEBO
100
µAdc
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
≤ 10%.
(continued)
(2) Proper strike and creepage distance must be provided.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUL44/D
© Motorola, Inc. 1995
BUL44
BUL44F
POWER TRANSISTOR
2.0 AMPERES
700 VOLTS
40 and 100 WATTS
*Motorola Preferred Device
BUL44
CASE 221A–06
TO–220AB
BUL44F
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
*
*
REV 1


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