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BUL44F Fiches technique(PDF) 1 Page - ON Semiconductor |
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BUL44F Fiches technique(HTML) 1 Page - ON Semiconductor |
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1 / 10 page ![]() 1 Motorola Bipolar Power Transistor Device Data Designer's™ Data Sheet SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL44/BUL44F have an applications specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors offer the following: • Improved Efficiency Due to Low Base Drive Requirements: — High and Flat DC Current Gain hFE — Fast Switching — No Coil Required in Base Circuit for Turn–Off (No Current Tail) • Full Characterization at 125°C • Tight Parametric Distributions are Consistent Lot–to–Lot • Two Package Choices: Standard TO–220 or Isolated TO–220 • BUL44F, Case 221D, is UL Recognized to 3500 VRMS: File #E69369 MAXIMUM RATINGS Rating Symbol BUL44 BUL44F Unit Collector–Emitter Sustaining Voltage VCEO 400 Vdc Collector–Emitter Breakdown Voltage VCES 700 Vdc Emitter–Base Voltage VEBO 9.0 Vdc Collector Current — Continuous — Peak(1) IC ICM 2.0 5.0 Adc Base Current — Continuous — Peak(1) IB IBM 1.0 2.0 Adc RMS Isolated Voltage(2) Test No. 1 Per Fig. 22a (for 1 sec, R.H. < 30%, Test No. 2 Per Fig. 22b TC = 25°C) Test No. 3 Per Fig. 22c VISOL — — — 4500 3500 1500 Volts Total Device Dissipation (TC = 25°C) Derate above 25 °C PD 50 0.4 25 0.2 Watts W/ °C Operating and Storage Temperature TJ, Tstg – 65 to 150 °C THERMAL CHARACTERISTICS Rating Symbol BUL44 BUL44F Unit Thermal Resistance — Junction to Case — Junction to Ambient R θJC R θJA 2.5 62.5 5.0 62.5 °C/W Maximum Lead Temperature for Soldering Purposes: 1/8 ″ from Case for 5 Seconds TL 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) VCEO(sus) 400 — — Vdc Collector Cutoff Current (VCE = Rated VCEO, IB = 0) ICEO — — 100 µAdc Collector Cutoff Current (VCE = Rated VCES, VEB = 0) (TC = 125°C) Collector Cutoff Current (VCE = 500 V, VEB = 0) (TC = 125°C) ICES — — — — — — 100 500 100 µAdc Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) IEBO — — 100 µAdc (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. (continued) (2) Proper strike and creepage distance must be provided. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUL44/D © Motorola, Inc. 1995 BUL44 BUL44F POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS *Motorola Preferred Device BUL44 CASE 221A–06 TO–220AB BUL44F CASE 221D–02 ISOLATED TO–220 TYPE UL RECOGNIZED * * REV 1 |
Numéro de pièce similaire - BUL44F |
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Description similaire - BUL44F |
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