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HY27SF161G2M-VIP Fiches technique(PDF) 2 Page - Hynix Semiconductor |
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HY27SF161G2M-VIP Fiches technique(HTML) 2 Page - Hynix Semiconductor |
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2 / 48 page ![]() Rev 0.7 / Apr. 2005 2 Preliminary HY27UF(08/16)1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Revision History - Continued - Revision No. History Draft Date Remark 0.5 1) Correct AC characteristics(tREH) before: 30ns-> after: 20ns 2) Add Errata Jan. 25. 2005 Preliminary 0.6 1) Change AC characteristics 2) Add tADL parameter - tADL=100ns 3) Correct table.9 Mar. 09. 2005 Preliminary 0.7 1) Correct AC Timing Characteristics Table - Errata value is eddited. - tADL(max) is changed to tADL(min). 2) Change Errata - tREA is deleted from the errata 3) Edit pin Description table 4) Delete Multiple Die & Stacked Devices Access - Texts & tables are deleted. 5) Edit Data Protection texts 6) Add Read ID table 7) Add tOH parameter - tOH=15ns(min.) 8) Add Marking Information 9) Correct application note.2 - tCS(2us) is changed to 100ns. Apr. 06. 2005 Preliminary Case tRC tRP tREH tREA Specification Read(all) 50 20 20 30 Relaxed value Except for ID Read 50 20 20 30 ID Read 60 25 30 30 tDH Before 10 After 15 Case tRC tRP tREH Before Except for ID Read 50 20 20 ID Read 60 25 30 After Read (all) 60 25 30 |
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