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QID4520002 Fiches technique(PDF) 1 Page - Powerex Power Semiconductors |
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QID4520002 Fiches technique(HTML) 1 Page - Powerex Power Semiconductors |
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1 / 6 page ![]() Dual IGBT HVIGBT Module 200 Amperes/4500 Volts 1 11/14 Rev. 3 Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID4520002 Preliminary Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 5.51 140.0 B 2.87 73.0 C 1.89 48.0 D 4.88±0.01 124.0±0.25 E 2.24±0.01 57.0±0.25 F 1.18 30.0 G 0.43 11.0 H 1.07 27.15 J 0.20 5.0 K 1.65 42.0 Description: Powerex HVIGBTs feature highly insulating housings that offer enhanced protection by means of greater creepage and strike clear- ance distance for many demanding applications like medium voltage drives and auxiliary traction applications. Features: -40 to 150°C Extended Temperature Range 100% Dynamic Tested 100% Partial Discharge Tested Advanced Mitsubishi R-Series Chip Technology Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance Complementary Line-up in Expanding Current Ranges to Mitsubishi HVIGBT Power Modules Copper Baseplate Creepage and Clearance Meet IEC 60077-1 Rugged SWSOA and RRSOA Applications: High Voltage Power Supplies Medium Voltage Drives Motor Drives Traction Dimensions Inches Millimeters L 0.69±0.01 17.5±0.25 M 0.38 9.75 N 0.20 5.0 P 0.22 5.5 Q 1.44 36.5 R 0.16 4.0 S M6 Metric M6 T 0.63 Min. 16.0 Min. U 0.11 x 0.02 2.8 x 0.5 V 0.28 Dia. 7.0 Dia. 3 2 1 N J (2TYP) S NUTS (3TYP) H H V (4TYP) M G (3TYP) R (DEEP) E B K (3TYP) L (2TYP) P U (5TYP) T (SCREWING DEPTH) Q 1 2 3 4 5 6 7 8 F F D A C |
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