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QID4520002 Fiches technique(PDF) 4 Page - Powerex Power Semiconductors

No de pièce QID4520002
Description  Dual IGBT
PDF  6 Pages
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Fabricant  POWEREX [Powerex Power Semiconductors]
Site Internet  http://www.pwrx.com
Logo POWEREX - Powerex Power Semiconductors

QID4520002 Fiches technique(HTML) 4 Page - Powerex Power Semiconductors

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QID4520002
Dual IGBT HVIGBT Module
200 Amperes/4500 Volts
4
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Preliminary
11/14 Rev. 3
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
EMITTER-COLLECTOR VOLTAGE, V
EC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
VCE = VGE
Tj = 25°C
Tj = 150°C
COLLECTOR-EMITTER VOLTAGE, V
CE, (VOLTS)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
2
4
8
6
82.5
0
VGE = 16V
11
15
13
10
Tj = 25°C
165.0
250.0
330.0
412.5
82.5
0
165.0
250.0
330.0
412.5
82.5
0
165.0
250.0
330.0
412.5
82.5
0
165.0
250.0
330.0
412.5
0
2
4
8
6
0
4
8
16
12
GATE-EMITTER VOLTAGE, V
GE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
VGE = 15V
0
5
2
4
3
1
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C



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