NE3521M04 pdf, NE3521M04 Description, NE3521M04 Fiches technique, NE3521M04 view ::: ALLDATASHEET :::

No de pièce	NE3521M04

Description	N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain

Taille du fichier	653.66 Kbytes

Html View	1 2 3 4 5 6 7 8 9

Fabricant	CEL [California Eastern Labs]

Site Internet	http://www.cel.com

Logo

Numéro de pièce similaire - NE3521M04

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	NE3521M04	414Kb / 10P	N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
	NE3521M04-T2	414Kb / 10P	N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
	NE3521M04-T2	414Kb / 10P	N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
	NE3521M04-T2-A	414Kb / 10P	N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
	NE3521M04-T2B	414Kb / 10P	N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	NE3520S03	216Kb / 10P	N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
	NE3517S03	208Kb / 11P	K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET
	NE3521M04	414Kb / 10P	N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
	NE3520S03-A	505Kb / 10P	N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
California Eastern Labs	NE3520S03	505Kb / 10P	N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
	NE3517S03	310Kb / 8P	K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET
	NE3516S02	333Kb / 9P	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
Renesas Technology Corp	NE3521M04	414Kb / 10P	N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
	NE3517S03	208Kb / 11P	K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET
	NE3520S03	227Kb / 10P	N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain