NE3516S02 Fiches technique(PDF) - California Eastern Labs

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NE3516S02 Fiches technique (PDF) - California Eastern Labs

NE3516S02 Datasheet PDF - California Eastern Labs


No de pièce	NE3516S02

Télécharger	NE3516S02 Télécharger

Taille du fichier	333.21 Kbytes

Page	9 Pages

Fabricant	CEL [California Eastern Labs]

Site Internet	http://www.cel.com

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Description

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

NE3516S02 Datasheet (PDF)

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Télécharger Fiches technique

NE3516S02 Datasheet PDF - California Eastern Labs


No de pièce	NE3516S02

Télécharger	NE3516S02 Click to download

Taille du fichier	333.21 Kbytes

Page	9 Pages

Fabricant	CEL [California Eastern Labs]

Site Internet	http://www.cel.com

Logo

Description	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

NE3516S02 Fiches technique (HTML) - California Eastern Labs

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NE3516S02 Datasheet HTML 5Page - California Eastern Labs

NE3516S02 Datasheet HTML 6Page - California Eastern Labs

NE3516S02 Datasheet HTML 7Page - California Eastern Labs

NE3516S02 Datasheet HTML 8Page - California Eastern Labs

NE3516S02 Datasheet HTML 9Page - California Eastern Labs

Numéro de pièce similaire - NE3516S02

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	NE3516S02	152Kb / 10P	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
	NE3516S02-T1C	152Kb / 10P	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
	NE3516S02-T1C	152Kb / 10P	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
	NE3516S02-T1C-A	152Kb / 10P	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
	NE3516S02-T1D	152Kb / 10P	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

Description similaire - NE3516S02

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	NE3513M04	228Kb / 10P	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
	NE3516S02	152Kb / 10P	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
	NE3521M04	414Kb / 10P	N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
	NE3520S03-A	505Kb / 10P	N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
California Eastern Labs	NE3521M04	653Kb / 9P	N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
	NE3520S03	505Kb / 10P	N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
	NE3513M04	1Mb / 9P	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
Renesas Technology Corp	NE3516S02	152Kb / 10P	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
	NE3521M04	414Kb / 10P	N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
	NE3513M04	239Kb / 10P	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

À propos de California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Ces informations sont fournies à titre informatif uniquement, nous ne serons pas responsables des pertes ou dommages causés par les informations ci-dessus.

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