| Fabricant | No de pièce | Fiches technique | Description |
Stanson Technology |
ST2315SRG
|
218Kb / 6P |
ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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ST2319SRG
|
229Kb / 8P |
ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
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ST2341A
|
582Kb / 6P |
ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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ST3400SRG
|
547Kb / 6P |
The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
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ST3401SRG
|
212Kb / 6P |
ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
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ST3407SRG
|
184Kb / 6P |
ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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ST3422A
|
338Kb / 6P |
The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
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STP7401
|
461Kb / 6P |
STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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STP9437
|
375Kb / 6P |
STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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STP9527
|
927Kb / 7P |
STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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