| Fabricant | No de pièce | Fiches technique | Description |
Stanson Technology |
ST2315SRG
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218Kb / 6P |
ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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ST2341A
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582Kb / 6P |
ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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ST3401SRG
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212Kb / 6P |
ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
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ST3407SRG
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184Kb / 6P |
ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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STP4435A
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311Kb / 6P |
STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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STP4803
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697Kb / 7P |
STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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STP6621
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452Kb / 6P |
STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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STP9437
|
375Kb / 6P |
STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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STP9527
|
927Kb / 7P |
STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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Shenzhen Huazhimei Semi... |
HM1P10MR
|
763Kb / 5P |
P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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