PTF191601F pdf, PTF191601F Description, PTF191601F Fiches technique, PTF191601F view ::: ALLDATASHEET :::

No de pièce	PTF191601F

Description	Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

Taille du fichier	206.33 Kbytes

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Fabricant	INFINEON [Infineon Technologies AG]

Site Internet	http://www.infineon.com

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Numéro de pièce similaire - PTF191601F

Fabricant	No de pièce	Fiches technique	Description
Infineon Technologies A...	PTF191601	61Kb / 4P	LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz 2004-03-17
Infineon Technologies A...	PTF191601E	61Kb / 4P	LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz 2004-03-17

Fabricant	No de pièce	Fiches technique	Description
Infineon Technologies A...	PTF191601	61Kb / 4P	LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz 2004-03-17
	PTFA192401E	431Kb / 11P	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 ??1990 MHz Rev. 02, 2009-04-01
	PTFB191501E	295Kb / 15P	Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 ??1990 MHz Rev. 02, 2009-09-09
	PTFA190451E	375Kb / 10P	Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 - 1990 MHz Rev. 03.1, 2009-02-20
	PTFA191001E	256Kb / 11P	Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz Rev. 04, 2007-10-31
	PTFA192001E	285Kb / 11P	Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz Rev. 05, 2008-05-15
	PTFB192503EL	673Kb / 15P	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930-1990 MHz Rev. 09, 2010-11-09
	PTFB193404F	244Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930-1990 MHz Rev. 04, 2011-02-07
	PTFB193404F	665Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 ??1990 MHz Rev. 05.2, 2016-06-14
Cree, Inc	PTFB192503FL	531Kb / 14P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 1930 ??1990 MHz