HAT2285WP pdf, HAT2285WP Description, HAT2285WP Fiches technique, HAT2285WP view ::: ALLDATASHEET :::

No de pièce	HAT2285WP

Description	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

Taille du fichier	115.14 Kbytes

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Fabricant	RENESAS [Renesas Technology Corp]

Site Internet	http://www.renesas.com

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Numéro de pièce similaire - HAT2285WP

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	HAT2285WP	130Kb / 10P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
Renesas Technology Corp	HAT2285WP-EL-E	130Kb / 10P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	RJK0383DPA	114Kb / 5P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	RJK0389DPA	113Kb / 5P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	HAT2285WP	130Kb / 10P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	HAT2210R	116Kb / 12P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	HAT2126RP	263Kb / 17P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	RJK0389DPA	358Kb / 11P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	RJK0214DPA	260Kb / 11P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	RJK0215DPA	271Kb / 11P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	RJK0230DPA	221Kb / 11P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
	RJK0223DNS	81Kb / 5P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching