Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.

Features
■ High voltage capability
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed

Applications
■ Electronic ballast for fluorescent lighting
■ Flyback and forward single transistor low power converters