2SC1947 Fiches technique(PDF) - Mitsubishi Electric Semiconductor

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2SC1947 Fiches technique (PDF) - Mitsubishi Electric Semiconductor

2SC1947 Datasheet PDF - Mitsubishi Electric Semiconductor


No de pièce	2SC1947

Télécharger	2SC1947 Télécharger

Taille du fichier	126.18 Kbytes

Page	3 Pages

Fabricant	MITSUBISHI [Mitsubishi Electric Semiconductor]

Site Internet	http://www.mitsubishichips.com

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Description

NPN EPITAXIAL PLANAR TYPE(for industrial use RF power amplifiers on VHF band Mobile radio applications)?

2SC1947 Datasheet (PDF)

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Télécharger Fiches technique

2SC1947 Datasheet PDF - Mitsubishi Electric Semiconductor


No de pièce	2SC1947

Télécharger	2SC1947 Click to download

Taille du fichier	126.18 Kbytes

Page	3 Pages

Fabricant	MITSUBISHI [Mitsubishi Electric Semiconductor]

Site Internet	http://www.mitsubishichips.com

Logo

Description	NPN EPITAXIAL PLANAR TYPE(for industrial use RF power amplifiers on VHF band Mobile radio applications)?

2SC1947 Fiches technique (HTML) - Mitsubishi Electric Semiconductor

2SC1947 Datasheet HTML 1Page - Mitsubishi Electric Semiconductor

2SC1947 Datasheet HTML 2Page - Mitsubishi Electric Semiconductor

2SC1947 Datasheet HTML 3Page - Mitsubishi Electric Semiconductor

2SC1947 Détails du produit

DESCRIPTION
2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications.

FEATURES
● High power gain: Gpe ≥ 10.7dB
@VCC = 13.5V, PO = 3.5W, f = 175MHz
● TO-39 metal seeled package for high reliability.
● Emitter electrode is connected electrically to the case

APPLICATION
1 to 3 watt power amplifiers in VHF band mobile radio applications.

Numéro de pièce similaire - 2SC1947

Fabricant	No de pièce	Fiches technique	Description
New Jersey Semi-Conduct...	2SC1947	88Kb / 1P	HIGH POWER TRANSISTOR SILICON NPN

Description similaire - 2SC1947

Fabricant	No de pièce	Fiches technique	Description
Mitsubishi Electric Sem...	2SC1944	54Kb / 1P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)
	2SC1945	132Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)?
	2SC1946	130Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?
	2SC1946A	135Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?
	2SC1969	145Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)
	2SC1971	127Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)
	2SC1972	130Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)
	2SC2053	123Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for RF amplifiers on VHF band Mobile radio applications)
	2SC2094	149Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in VHF band Mobile radio applications)
New Jersey Semi-Conduct...	2SC1971	153Kb / 1P	silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio

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