| Fabricant | No de pièce | Fiches technique | Description |
 VIGO Photonics S.A. |
PCI
|
695Kb / 2P |
1.0 – 12.0 μm HgCdTe ambient temperature, optically immersed photoconductive detectors
08/11/2020 |
|
PEMI
|
744Kb / 2P |
2.0 – 12.0 μm HgCdTe ambient temperature, optically immersed photoelectromagnetic detectors
09/11/2020 |
|
PVI-2TE
|
799Kb / 2P |
2 – 12 μm HgCdTe two-stage thermoelectrically cooled, optically immersed photovoltaic detectors
25/09/2020 |
|
PVI-3TE
|
796Kb / 2P |
2 – 12 μm HgCdTe three-stage thermoelectrically cooled, optically immersed photovoltaic detectors
04/03/2021 |
|
PV-SERIES
|
696Kb / 2P |
2.5 – 6.5 μm HgCdTe ambient temperature photovoltaic detectors
17/11/2020 |
|
PVI-4TE
|
799Kb / 2P |
2 – 12 μm HgCdTe four-stage thermoelectrically cooled, optically immersed photovoltaic detectors
24/02/2021 |
|
PVIA
|
645Kb / 2P |
2.4 – 5.3 μm InAs and InAsSb ambient temperature, optically immersed photovoltaic detectors
04/05/2022 |
|
PVM
|
695Kb / 2P |
2.0 – 13.0 μm HgCdTe ambient temperature photovoltaic multiple junction detectors
09/11/2020 |
|
PVMI-3TE
|
767Kb / 2P |
2.0 – 13.0 μm HgCdTe three-stage thermoelectrically cooled, optically immersed photovoltaic multiple junction detectors
09/11/2020 |
|
PVMI
|
699Kb / 2P |
2 – 12 μm HgCdTe ambient temperature, optically immersed photovoltaic multiple junction detectors
25/09/2020 |