| Fabricant | No de pièce | Fiches technique | Description |
 VIGO Photonics S.A. |
PVI4TE6TO8-36-DTE
|
722Kb / 2P |
3.0 – 6.9 μm HgCdTe four-stage thermoelectrically cooled, optically immersed photovoltaic detector
25/09/2020 |
|
PCI
|
695Kb / 2P |
1.0 – 12.0 μm HgCdTe ambient temperature, optically immersed photoconductive detectors
08/11/2020 |
|
PEMI
|
744Kb / 2P |
2.0 – 12.0 μm HgCdTe ambient temperature, optically immersed photoelectromagnetic detectors
09/11/2020 |
|
PVI-2TE-4-1
|
701Kb / 2P |
PVI-2TE-4-1×1-TO8-wAl2O3-36 2.4 – 4.3 μm HgCdTe two-stage thermoelectrically cooled, optically immersed photovoltaic detector
25/09/2020 |
|
PVI-2TE-6-1
|
723Kb / 2P |
PVI-2TE-6-1×1-TO8-wZnSeAR-36 3.0 – 6.7 μm HgCdTe two-stage thermoelectrically cooled, optically immersed photovoltaic detector
25/09/2020 |
|
PVI
|
700Kb / 2P |
2.5 – 6.5 μm HgCdTe ambient temperature, optically immersed photovoltaic detectors
25/09/2020 |
|
PVI-5-1
|
671Kb / 2P |
PVI-5-1×1-TO39-NW-36 2.4 – 5.5 μm HgCdTe ambient temperature, optically immersed photovoltaic detector
25/09/2020 |
|
PVIA
|
645Kb / 2P |
2.4 – 5.3 μm InAs and InAsSb ambient temperature, optically immersed photovoltaic detectors
04/05/2022 |
|
PVM-10.6-1
|
669Kb / 2P |
2.0 – 12.0 μm HgCdTe ambient temperature photovoltaic multiple junction detector
08/11/2020 |
|
PVMI
|
699Kb / 2P |
2 – 12 μm HgCdTe ambient temperature, optically immersed photovoltaic multiple junction detectors
25/09/2020 |