N-CHANNEL SILICON POWER MOS FET
POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS

DESCRIPTION
The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate lateral MOS
FET), housed in a surface mount 3-pin power minimold (34 PKG) (SOT-89 type) package. The device can deliver 35
dBm output power with 63% power added efficiency at 900 MHz under the 4.8 V supply voltage.
The NE5500434 also can deliver 31.5 dBm output power with 60% power added efficiency at 3.6 V.

FEATURES
• High output power : Pout = 35 dBm TYP. (VDS = 4.8 V, f = 900 MHz, Pin = 25 dBm)
: Pout = 31.5 dBm TYP. (VDS = 3.6 V, f = 900 MHz, Pin = 20 dBm)
• High power added efficiency : ηadd = 60% TYP. (VDS = 4.8 V, f = 900 MHz)
• High linear gain : GL = 14.0 dB TYP. (VDS = 4.8 V, f = 900 MHz)
• Surface mount package : 3-pin power minimold (34 PKG) (SOT-89 type)
• Single supply : VDS = 4.8 V for GSM class 4 handsets