N-CHANNEL SILICON POWER MOS FET
POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS

DESCRIPTION
The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate
lateral MOS FET), housed in a surface mount 3-pin power minimold (34 PKG) (SOT-89 type) package. The device
can deliver 29.5 dBm output power with 55% power added efficiency at 1.9 GHz under the 4.8 V supply voltage.
FEATURES
• High output power : Pout = 29.5 dBm TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = 20 dBm)
• High power added efficiency : ηadd = 55% TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = 20 dBm)
• High linear gain : GL = 13 dB TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = 10 dBm)
• Surface mount package : 3-pin power minimold (34 PKG) (SOT-89 type)
• Single supply : VDS = 3.0 to 6.0 V