Summary description
The M69KB096AB is a 64 Mbit (67,108,864 bit) PSRAM, organized as 4,194,304 Words by 16 bits. It uses a high-speed CMOS DRAM technology implemented using a one transistor-per-cell topology that achieves bigger array sizes. It provides a high-density solution for low-power handheld applications.
The M69KB096AB is supplied by a 1.7 to 1.95V supply voltage range.

Features summary
■ Supply Voltage
   – VCC = 1.7 to 1.95V core supply voltage
   – VCCQ = 1.7 to 1.95V for I/O buffers
■ User-selectable Operating Modes
   – Asynchronous Modes: Random Read, and Write, Page Read
   – Synchronous Modes: NOR-Flash, Full Synchronous (Burst Read and Write)
■ Asynchronous Random Read
   – Access Time: 70ns
■ Asynchronous Page Read
   – Page Size: 4, 8 or 16 Words
   – Subsequent Read Within Page: 20ns
■ Burst Read
   – Fixed Length (4, 8, 16 or 32 Words) or Continuous
   – Maximum Clock Frequency: 104MHz
   – Output delay: 7ns at 104MHz
■ Low Power Consumption
   – Active Current: < 25mA
   – Standby Current: 140µA
   – Deep Power-Down Current: < 10µA
■ Low Power Features
   – Partial Array Self-Refresh (PASR)
   – Deep Power-Down (DPD) Mode
   – Automatic Temperature-compensated SelfRefresh
■ Operating Temperature
   – –30°C to +85°C