| Fabricant | No de pièce | Fiches technique | Description |
 Infineon Technologies A... |
PXAC200902FC
|
489Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 ??2170 MHz
Rev. 02.1, 2016-02-11 |
|
PXAC210552FC
|
206Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz
Rev. 02, 2015-12-04 |
|
PXAC210552MD
|
466Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz
Rev. 03.1, 2017-01-25 |
|
PXAC210552ND
|
466Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz
Rev. 04.1, 2017-01-09 |
 Cree, Inc |
PXAC210552FC
|
600Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz
|
|
PXAC200902FC
|
600Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 - 2170 MHz
|
 Skyworks Solutions Inc. |
SKY65804-696LF
|
136Kb / 2P |
Mid-Band 1805 to 2170 MHz Low-Noise Amplifier
|
 WALSIN TECHNOLOGY CORPO... |
RFBPF1109B301T
|
568Kb / 7P |
1805 ~ 1880 MHz Working Frequency
|
|
SF11091842B305T
|
729Kb / 8P |
1805~1880 MHz Band Working Frequency
|
|
SF11092140B102T
|
734Kb / 8P |
2110~2170 MHz Band Working Frequency
|