| Fabricant | No de pièce | Fiches technique | Description |
Shenzhen Huazhimei Semi... |
HM609BK
|
2Mb / 8P |
N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
|
Stanson Technology |
STC6332
|
421Kb / 9P |
The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
|
Shenzhen Huazhimei Semi... |
HM1P10MR
|
763Kb / 5P |
P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology |
ST2319SRG
|
229Kb / 8P |
ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
|
ST2318SRG
|
221Kb / 7P |
ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
|
STP6308
|
420Kb / 6P |
STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
STP9527
|
927Kb / 7P |
STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
ST2315SRG
|
218Kb / 6P |
ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
STP7401
|
461Kb / 6P |
STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
ST3401SRG
|
212Kb / 6P |
ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
|
French ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
