# INCHANGE Semiconductor - Silicon NPN Power Transistors 2N6497/6498/6499

## General Description

· Designed for high voltage inverters, switching regulators, and line operated amplifier applications.
· 2N6497: VCEO(SUS) = 250V(Min)
· 2N6498: VCEO(SUS) = 300V(Min)
· 2N6499: VCEO(SUS) = 350V(Min)
· DC Current Gain: hFE = 10-75 @ IC = 2.5A

## Absolute Maximum Ratings (Ta=25℃)

· VCBO (Collector-Base Voltage): 350V (2N6497), 400V (2N6498), 450V (2N6499)
· VCEO (Collector-Emitter Voltage): 250V (2N6497), 300V (2N6498), 350V (2N6499)
· VEBO (Emitter-Base Voltage): 6V
· IC (Collector Current - Continuous): 5A
· ICM (Collector Current - Peak): 10A
· IB (Base Current): 2A
· PD (Total Power Dissipation @ TC=25℃): 80W
· Tj (Junction Temperature): 150℃
· Tstg (Storage Temperature): -65~150℃

## Thermal Characteristics

· Rth j-c (Thermal Resistance, Junction to Case): 1.56 ℃/W

## Electrical Characteristics (Tj=25℃)

· VCE(sat)-1 (Collector-Emitter Saturation Voltage): 1.0V (2N6497), 1.25V (2N6498), 1.5V (2N6499) @ IC=2.5A; IB=0.5A
· VCE(sat)-2 (Collector-Emitter Saturation Voltage): 5.0V @ IC=5A; IB=2A
· VBE(sat)-1 (Base-Emitter Saturation Voltage): 1.5V @ IC=2.5A; IB=0.5A
· VBE(sat)-2 (Base-Emitter Saturation Voltage): 2.5V @ IC=5A; IB=2A
· ICEX (Collector Cutoff Current): 1.0 mA @ VCE=350V, VBE(off)=1.5V (2N6497)
· IEBO (Emitter Cutoff Current): 1.0 mA @ VEB=6V, IC=0
· hFE-1 (DC Current Gain): 10-75 @ IC=2.5A, VCE=10V
· hFE-2 (DC Current Gain): 3 @ IC=5A, VCE=10V
· fT (Current-Gain—Bandwidth Product): 5 MHz @ IC=0.25A, VCE=10V, ftest=1.0MHz
· tr (Rise Time): 1.0 μs @ VCC=125V, tp=0.1ms, IC=2.5A, IB1= -IB2=0.5 A
· tS (Storage Time): 2.5 μs
· tf (Fall Time): 1.0 μs