2SA1116 / Inchange Semiconductor Company Limited

2SA1116 Datasheet with Chat AI

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Part No.	2SA1116
Manufacturer	ISC
Size	49 Kbytes
Pages	2 pages
Description	isc Silicon PNP Power Transistor

Datasheet Summary with AI

## Electrical Characteristics (Tj=25°C unless otherwise specified)

· V(BR)CEO (Collector-Emitter Breakdown Voltage): -200V (at IC = -50mA, IB = 0)
· VCE(sat) (Collector-Emitter Saturation Voltage): -3.0V (at IC = -10A, IB = -1A)
· ICBO (Collector Cutoff Current): -100μA (at VCB = -200V, IE = 0)
· IEBO (Emitter Cutoff Current): -100μA (at VEB = -6V, IC = 0)
· hFE (DC Current Gain): 30 (at IC = -5A, VCE = -4V)
· fT (Current-Gain—Bandwidth Product): 20 MHz (at IE = 0.5A, VCE = -12V)

## Switching Times

· tr (Rise Time): 0.3 μs
· tstg (Storage Time): 0.9 μs
· tf (Fall Time): 0.2 μs (at IC= -5A, RL= 12Ω, IB1=IB2= -0.5A, VCC= -60V)

## Website

· www.iscsemi.cn

# 2SA1116 Silicon PNP Power Transistor

## Description

· Collector-Emitter Breakdown Voltage: V(BR)CEO = -200V (Min.)
· High power dissipation
· Complement to Type 2SC2607
· General purpose applications

## Absolute Maximum Ratings (Ta = 25°C)

· VCBO (Collector-Base Voltage): -200V
· VCEO (Collector-Emitter Voltage): -200V
· VEBO (Emitter-Base Voltage): -6V
· IC (Continuous Collector Current): -15A
· IB (Continuous Base Current): -5A
· PC (Collector Power Dissipation @TC=25°C): 150W
· Tj (Junction Temperature): 150°C
· Tstg (Storage Temperature): -65~150°C

## Electrical Characteristics (Tj=25°C unless otherwise specified)

· V(BR)CEO (Collector-Emitter Breakdown Voltage): -200V (at IC = -50mA, IB = 0)
· VCE(sat) (Collector-Emitter Saturation Voltage): -3.0V (at IC = -10A, IB = -1A)
· ICBO (Collector Cutoff Current): -100μA (at VCB = -200V, IE = 0)
· IEBO (Emitter Cutoff Current): -100μA (at VEB = -6V, IC = 0)
· hFE (DC Current Gain): 30 (at IC = -5A, VCE = -4V)
· fT (Current-Gain—Bandwidth Product): 20 MHz (at IE = 0.5A, VCE = -12V)

## Switching Times

· tr (Rise Time): 0.3 μs
· tstg (Storage Time): 0.9 μs
· tf (Fall Time): 0.2 μs (at IC= -5A, RL= 12Ω, IB1=IB2= -0.5A, VCC= -60V)

## Website

· www.iscsemi.cn