WG-AL6-R Fiches technique, PDF

Fabricant	No de pièce	Fiches technique	Description
Unisonic Technologies	2N7002DWG-AL6-R	306Kb/6P	300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET
	2N7002DWG-AL6-R	291Kb/6P	300mA, 60V DUAL N-CHANNEL POWER MOSFET
	2N7002DWG-AL6-R	304Kb/6P	DUAL POSITIVE-EDGETRIGGERED D-TYPE FLIP-FLOPS
	2N7002ZDWG-AL6-R	176Kb/3P	300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
	2N7002ZDWG-AL6-R	177Kb/3P	300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	2N7002ZDWG-AL6-R	178Kb/3P	DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	BAT54ADWG-AL6-R	148Kb/2P	SCHOTTKY BARRIER (DUAL) DIODES
	BAT54ADWG-AL6-R	152Kb/3P	SCHOTTKY BARRIER DIODES
	BAT54CDWG-AL6-R	150Kb/2P	SCHOTTKY BARRIER (DUAL) DIODES
	BAT54CDWG-AL6-R	146Kb/3P	SCHOTTKY BARRIER DIODES
	BAT54DWG-AL6-R	150Kb/2P	SCHOTTKY BARRIER (DUAL) DIODES
	BAT54DWG-AL6-R	152Kb/3P	SCHOTTKY BARRIER DIODES
	BAT54SDWG-AL6-R	150Kb/2P	SCHOTTKY BARRIER (DUAL) DIODES
	BAT54SDWG-AL6-R	152Kb/3P	SCHOTTKY BARRIER DIODES
	BAT54TDWG-AL6-R	148Kb/2P	SCHOTTKY BARRIER (DUAL) DIODES
	BAT54TDWG-AL6-R	152Kb/3P	SCHOTTKY BARRIER DIODES
	BSS84ZWG-AL6-R	145Kb/3P	0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Lien URL