| Fabricant | No de pièce | Fiches technique | Description |
List of Unclassifed Man... |
VF2-10X
|
167Kb/1P |
High voltage diffused silicon power rectifiers
|
|
VF2-12X
|
167Kb/1P |
High voltage diffused silicon power rectifiers
|
|
VF2-15X
|
167Kb/1P |
High voltage diffused silicon power rectifiers
|
|
VF2-20X
|
167Kb/1P |
High voltage diffused silicon power rectifiers
|
|
VF2-25
|
167Kb/1P |
High voltage diffused silicon power rectifiers
|
|
VF2-25X
|
167Kb/1P |
High voltage diffused silicon power rectifiers
|
|
VF2-30
|
167Kb/1P |
High voltage diffused silicon power rectifiers
|
|
VF2-30X
|
167Kb/1P |
High voltage diffused silicon power rectifiers
|
|
VF2-40
|
167Kb/1P |
High voltage diffused silicon power rectifiers
|
|
VF2-40X
|
167Kb/1P |
High voltage diffused silicon power rectifiers
|
|
VF2-7X
|
167Kb/1P |
High voltage diffused silicon power rectifiers
|
New Jersey Semi-Conduct... |
VF20
|
91Kb/1P |
Diffused Silicon Junction
|
Vishay Siliconix |
VF20100C
|
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
31-Jul-08 |
|
VF20100C
|
161Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VF20100C
|
78Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
10-Nov-10 |
|
VF20100C
|
164Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
16-Aug-13 |
|
VF20100C
|
151Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
14-Aug-13 |
|
VF20100C
|
127Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
09-Mar-18 |
|
VF20100C-E3
|
167Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
13-Dec-16 |
|
VF20100C-E3
|
214Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
18-Jun-2018 |
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