STS11NF3LL Fiches technique, PDF

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STS11NF30L	45Kb/6P	N-CHANNEL 30V - 0.009 ohm - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET Apr-2000
STMicroelectronics	STS11NF30L	332Kb/12P	N-channel 30V - 0.0085Ω - 11A SO-8 Low gate charge STripFET??II Power MOSFET 12-Jan-2007
SHENZHEN DOINGTER SEMIC...	STS11NF30L	1Mb/4P	N-Channel MOSFET uses advanced trench technology
VBsemi Electronics Co.,...	STS11NF30L	928Kb/9P	N-Channel 20V (D-S) MOSFET
STMicroelectronics	STS11NF30L	332Kb/12P	N-channel 30V - 0.0085Ω - 11A SO-8 Low gate charge STripFET??II Power MOSFET 12-Jan-2007
STMicroelectronics	STS11N3LLH5	732Kb/12P	N-channel 30 V, 0.0117 Ω, 11 A, SO-8 STripFET™ V Power MOSFET June 2011 Rev 2
VBsemi Electronics Co.,...	STS11N3LLH5	929Kb/9P	N-Channel 20V (D-S) MOSFET
Solid State Optronic	STS100	130Kb/4P	Multifunction Telecommunications Switch
Solid State Inc	STS100	596Kb/7P	Telecom switching
JILIN SINO-MICROELECTRO...	STS10100S	409Kb/6P	TRENCH SCHOTTKY BARRIER DIODE 201807B
	STS10100S-RM-A	409Kb/6P	TRENCH SCHOTTKY BARRIER DIODE 201807B
	STS10100S-RM-A	1Mb/9P	TRENCH SCHOTTKY BARRIER DIODE 202211D
	STS10100S-RM-AR	409Kb/6P	TRENCH SCHOTTKY BARRIER DIODE 201807B
	STS10100S-RM-AR	1Mb/9P	TRENCH SCHOTTKY BARRIER DIODE 202211D
	STS10100S-XG-A	409Kb/6P	TRENCH SCHOTTKY BARRIER DIODE 201807B
	STS10100S-XG-AR	409Kb/6P	TRENCH SCHOTTKY BARRIER DIODE 201807B
STMicroelectronics	STS10DN3LH5	773Kb/13P	Very low switching gate charge May 2009 Rev 1
STMicroelectronics	STS10N3LH5	778Kb/13P	N-channel 30 V, 0.019 Ω, 10 A, SO-8 STripFET™V Power MOSFET 06-May-2009
VBsemi Electronics Co.,...	STS10N3LH5	1,006Kb/9P	N-Channel 20V (D-S) MOSFET
STMicroelectronics	STS10NF30L	44Kb/6P	N - CHANNEL 30V - 0.011ohm - 10A SO-8 STripFET POWER MOSFET Jun-2000

STS11NF3LL Fiches technique, PDF

STS11NF3LL Datasheet ,PDF

Lien URL