| Fabricant | No de pièce | Fiches technique | Description |
SHENZHEN DOINGTER SEMIC... |
SSG9575
|
1Mb/4P |
P-Channel MOSFET uses advanced trench technology
|
SeCoS Halbleitertechnol... |
SSG9575
|
233Kb/4P |
P-Channel Enhancement Mode Power Mos.FET
|
|
SSG9575
|
238Kb/4P |
P-Channel Enhancement Mode Power Mos.FET
|
|
SSG9410
|
410Kb/4P |
N-Channel Enhancement Mode Power Mos.FET
|
VBsemi Electronics Co.,... |
SSG9410
|
1Mb/9P |
N-Channel 20V (D-S) MOSFET
|
SeCoS Halbleitertechnol... |
SSG9435
|
3Mb/5P |
P-Ch Enhancement Mode Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
SSG9435
|
1Mb/5P |
P-Channel MOSFET uses advanced trench technology
|
VBsemi Electronics Co.,... |
SSG9435
|
1Mb/8P |
P-Channel 30-V (D-S) MOSFET
|
List of Unclassifed Man... |
SSG9435
|
306Kb/5P |
P-Channel Enhancement Mode Power Mos.FET
|
SeCoS Halbleitertechnol... |
SSG9435
|
710Kb/5P |
P-Ch Enhancement Mode Power MOSFET
|
VBsemi Electronics Co.,... |
SSG9435A
|
1Mb/8P |
P-Channel 30-V (D-S) MOSFET
|
SeCoS Halbleitertechnol... |
SSG9435BDY
|
616Kb/4P |
-5.3 A, -30 V, RDS(ON) 36 m P-Ch Enhancement Mode Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
SSG9435BDY
|
1Mb/4P |
P-Channel MOSFET uses advanced trench technology
|
VBsemi Electronics Co.,... |
SSG9435BDY
|
1Mb/8P |
P-Channel 30-V (D-S) MOSFET
|
SeCoS Halbleitertechnol... |
SSG9435BDY
|
616Kb/4P |
P-Ch Enhancement Mode Power MOSFET
|
|
SSG9435J
|
369Kb/3P |
P-Ch Enhancement Mode Power MOSFET
|
|
SSG9435J-C
|
356Kb/4P |
P-Ch Enhancement Elektronische Bauelemente Mode Power MOSFET
|
|
SSG9435P
|
633Kb/4P |
P-Ch Enhancement Mode Power MOSFET
|
VBsemi Electronics Co.,... |
SSG9435P
|
1Mb/8P |
P-Channel 30-V (D-S) MOSFET
|
SeCoS Halbleitertechnol... |
SSG9435P
|
633Kb/4P |
P-Ch Enhancement Mode Power MOSFET
|
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