PDTC123J Fiches technique, PDF

Fabricant	No de pièce	Fiches technique	Description
NXP Semiconductors	PDTC123J	92Kb/14P	NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM 2004 Aug 13
NXP Semiconductors	PDTC123J	181Kb/14P	NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓 2004 Aug 13
Nexperia B.V. All right...	PDTC123J	363Kb/20P	50 V, 100 mA NPN resistor-equipped transistors Rev. 1 - 1 October 2021
Nexperia B.V. All right...	PDTC123J	859Kb/18P	NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k Rev. 7 - 21 December 2011
NXP Semiconductors	PDTC123JE	50Kb/8P	NPN resistor-equipped transistor 1999 May 21
	PDTC123JE	92Kb/14P	NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM 2004 Aug 13
	PDTC123JE	181Kb/14P	NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓 2004 Aug 13
Nexperia B.V. All right...	PDTC123JE	1Mb/18P	PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k Rev. 5 - 21 December 2011
Nexperia B.V. All right...	PDTC123JE	859Kb/18P	NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k Rev. 7 - 21 December 2011
NXP Semiconductors	PDTC123JEF	49Kb/8P	NPN resistor-equipped transistor 1999 May 27
	PDTC123JEF	92Kb/14P	NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM 2004 Aug 13
	PDTC123JEF	181Kb/14P	NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓 2004 Aug 13
	PDTC123JK	92Kb/14P	NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM 2004 Aug 13
	PDTC123JK	181Kb/14P	NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓 2004 Aug 13
	PDTC123JM	92Kb/14P	NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM 2004 Aug 13
	PDTC123JM	181Kb/14P	NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓 2004 Aug 13
Nexperia B.V. All right...	PDTC123JM	818Kb/12P	50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ 1 April 2023
	PDTC123JM	1Mb/18P	PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k Rev. 5 - 21 December 2011
	PDTC123JM	859Kb/18P	NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k Rev. 7 - 21 December 2011
	PDTC123JMB	840Kb/12P	NPN resistor-equipped transistor; R1 = 2.2 k廓, R2 = 47 k廓

PDTC123J Fiches technique, PDF

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