| Fabricant | No de pièce | Fiches technique | Description |
NXP Semiconductors |
MML09211H
|
566Kb/20P |
Low Noise Amplifier
Rev. 1, 9/2014 |
|
MML09212H
|
709Kb/27P |
Low Noise Amplifier
Rev. 3, 01/2018 |
|
MML09212HT1
|
709Kb/27P |
Low Noise Amplifier
Rev. 3, 01/2018 |
|
MML09231H
|
307Kb/12P |
Low Noise Amplifier
Rev. 1, 9/2014 |
|
MML09231HT1
|
307Kb/12P |
Low Noise Amplifier
Rev. 1, 9/2014 |
Dc Components |
MML1225
|
237Kb/1P |
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 300 to 380 Volts
|
NXP Semiconductors |
MML20211H
|
580Kb/20P |
Low Noise Amplifier
Rev. 1, 9/2014 |
Freescale Semiconductor... |
MML20211HT1
|
513Kb/20P |
Enhancement Mode pHEMT Technology (E--pHEMT)
|
NXP Semiconductors |
MML20211HT1
|
580Kb/20P |
Low Noise Amplifier
Rev. 1, 9/2014 |
|
MML20242H
|
637Kb/20P |
Enhancement Mode pHEMT Technology (E--pHEMT)
Rev. 2, 9/2014 |
|
MML20242HT1
|
637Kb/20P |
Enhancement Mode pHEMT Technology (E--pHEMT)
Rev. 2, 9/2014 |
|
MML25231H
|
418Kb/18P |
Enhancement Mode pHEMT Technology (E--pHEMT)
Rev. 0, 4/2016 |
|
MML25231HT1
|
418Kb/18P |
Enhancement Mode pHEMT Technology (E--pHEMT)
Rev. 0, 4/2016 |
Microsemi Corporation |
MML4400
|
339Kb/17P |
RoHS-Compliant Fast Surface Mount MRI Protection Diodes
|
|
MML4401-GM2
|
339Kb/17P |
RoHS-Compliant Fast Surface Mount MRI Protection Diodes
|
|
MML4401-GM3
|
339Kb/17P |
RoHS-Compliant Fast Surface Mount MRI Protection Diodes
|
|
MML4402-GM2
|
339Kb/17P |
RoHS-Compliant Fast Surface Mount MRI Protection Diodes
|
|
MML4402-GM3
|
339Kb/17P |
RoHS-Compliant Fast Surface Mount MRI Protection Diodes
|
|
MML4403-GM2
|
339Kb/17P |
RoHS-Compliant Fast Surface Mount MRI Protection Diodes
|
|
MML4403-GM3
|
339Kb/17P |
RoHS-Compliant Fast Surface Mount MRI Protection Diodes
|
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