| Fabricant | No de pièce | Fiches technique | Description |
 VBsemi Electronics Co.,... |
KF2N60D
|
1Mb/9P |
N-Channel 650 V (D-S) MOSFET
|
 KEC(Korea Electronics) |
KF2N60D
|
392Kb/6P |
N CHANNEL MOS FIELD EFFECT TRANSISTOR
|
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KF2N60D
|
409Kb/6P |
N CHANNEL MOS FIELD EFFECT TRANSISTOR
|
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KF2N60D/I
|
392Kb/6P |
N CHANNEL MOS FIELD EFFECT TRANSISTOR
|
|
KF2N60DI
|
392Kb/6P |
N CHANNEL MOS FIELD EFFECT TRANSISTOR
|
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KF2N60D
|
392Kb/6P |
N CHANNEL MOS FIELD EFFECT TRANSISTOR
|
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KF2N60F
|
420Kb/7P |
N CHANNEL MOS FIELD EFFECT TRANSISTOR
|
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KF2N60F
|
420Kb/7P |
N CHANNEL MOS FIELD EFFECT TRANSISTOR
|
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KF2N60I
|
392Kb/6P |
N CHANNEL MOS FIELD EFFECT TRANSISTOR
|
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KF2N60I
|
409Kb/6P |
N CHANNEL MOS FIELD EFFECT TRANSISTOR
|
|
KF2N60L
|
1Mb/7P |
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
|
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KF2N60L
|
1Mb/7P |
N CHANNEL MOS FIELD EFFECT TRANSISTOR
|
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KF2N60P/F
|
420Kb/7P |
N CHANNEL MOS FIELD EFFECT TRANSISTOR
|
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KF2N60PF
|
420Kb/7P |
N CHANNEL MOS FIELD EFFECT TRANSISTOR
|
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KF2N60P
|
420Kb/7P |
N CHANNEL MOS FIELD EFFECT TRANSISTOR
|
 Rohm |
KF2002-GC10A
|
180Kb/4P |
Compact medium speed thick film thermal printhead (8 dots / mm)
|
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KF2002-GD10A
|
171Kb/4P |
Compact medium speed thick film thermal printhead (8 dots / mm)
|
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KF2002-GD31A
|
72Kb/5P |
Compact medium speed thick film thermal printhead (8 dots /mm)
|
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KF2002-GF41A
|
89Kb/5P |
Compact high speed thick film thermal printhead (8dots/ mm)
|
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KF2002-GF71A
|
86Kb/5P |
Compact low voltage thick film thermal printhead (8dots / mm)
|