| Fabricant | No de pièce | Fiches technique | Description |
International Rectifier |
IRF1302PBF
|
165Kb/10P |
AUTOMOTIVE MOSFET ( VDSS = 20V , RDS(on) = 4.0m廓 , ID = 180A )
|
|
IRF1302S
|
229Kb/11P |
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A??
|
Fairchild Semiconductor |
IRF130-133
|
180Kb/6P |
N-Channel Power MOSFETs, 20 A, 60-100 V
|
International Rectifier |
IRF1302
|
523Kb/9P |
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A??
|
Seme LAB |
IRF130SMD
|
22Kb/2P |
N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
|
|
IRF130SMD05N
|
29Kb/2P |
N?밅HANNEL POWER MOSFET FOR HI?밨EL APPLICATIONS
|
Samsung semiconductor |
IRF130
|
211Kb/5P |
N-CHANNEL POWER MOSFETS
|
Seme LAB |
IRF130
|
22Kb/2P |
N-CHANNEL POWER MOSFET
|
Fairchild Semiconductor |
IRF130
|
180Kb/6P |
N-Channel Power MOSFETs, 20 A, 60-100 V
|
Intersil Corporation |
IRF130
|
56Kb/7P |
14A, 100V, 0.160 Ohm, N-Channel Power MOSFET
March 1999 |
International Rectifier |
IRF130
|
147Kb/7P |
TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A)
|
New Jersey Semi-Conduct... |
IRF130
|
106Kb/3P |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
|
Inchange Semiconductor ... |
IRF130
|
48Kb/2P |
High Power,High Speed Applications
|
List of Unclassifed Man... |
IRF130
|
2Mb/31P |
SEMICONDUCTORS
|
Samsung semiconductor |
IRF131
|
211Kb/5P |
N-CHANNEL POWER MOSFETS
|
Fairchild Semiconductor |
IRF131
|
180Kb/6P |
N-Channel Power MOSFETs, 20 A, 60-100 V
|
Inchange Semiconductor ... |
IRF131
|
198Kb/2P |
N-Channel MOSFET Transistor
|
International Rectifier |
IRF1310N
|
96Kb/8P |
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
|
Inchange Semiconductor ... |
IRF1310N
|
338Kb/2P |
N-Channel MOSFET Transistor
|
International Rectifier |
IRF1310NL
|
156Kb/10P |
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
|
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