| Fabricant | No de pièce | Fiches technique | Description |
Toshiba Semiconductor |
HN1C01F-GRTE85LF
|
249Kb/4P |
Audio-Frequency General-Purpose Amplifier Applications
|
|
HN1C01FE
|
194Kb/3P |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
|
HN1C01FU-GR
|
243Kb/4P |
Audio-Frequency General-Purpose Amplifier Applications
|
|
HN1C01FU-Y
|
243Kb/4P |
Audio-Frequency General-Purpose Amplifier Applications
|
|
HN1C01FU
|
236Kb/4P |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
|
HN1C01F
|
232Kb/4P |
Audio-Frequency General-Purpose Amplifier Applications
|
|
HN1C01F
|
155Kb/2P |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
|
HN1C01F
|
232Kb/4P |
Audio-Frequency General-Purpose Amplifier Applications
|
|
HN1C01F
|
249Kb/4P |
Audio-Frequency General-Purpose Amplifier Applications
|
|
HN1C01F
|
243Kb/4P |
Audio-Frequency General-Purpose Amplifier Applications
|
|
HN1C01F
|
243Kb/4P |
Audio-Frequency General-Purpose Amplifier Applications
|
|
HN1C03F
|
197Kb/4P |
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
|
|
HN1C03F
|
307Kb/5P |
Silicon NPN Epitaxial Type (PCT Process) For Muting And Switching Applications
|
|
HN1C03F
|
317Kb/5P |
For Muting And Switching Applications
|
|
HN1C03FU
|
197Kb/4P |
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
|
|
HN1C03FUTE85R
|
317Kb/5P |
For Muting And Switching Applications
|
|
HN1C03F
|
307Kb/5P |
Silicon NPN Epitaxial Type (PCT Process) For Muting And Switching Applications
|
|
HN1C07F
|
138Kb/3P |
Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications
|
Guangdong Kexin Industr... |
HN1C07F
|
58Kb/1P |
NPN Silicon Epitaxial Transistor
|
Toshiba Semiconductor |
HN1C26FS
|
152Kb/3P |
Frequency General-Purpose Amplifier Applications
|
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