| Fabricant | No de pièce | Fiches technique | Description |
Panasonic Semiconductor |
EKMB
|
1Mb/6P |
Passive Infrared Motion Sensor
|
|
EKMB1100100
|
1Mb/4P |
Low current consumption for battery-driven applications
|
|
EKMB1100100K
|
1Mb/4P |
Low current consumption for battery-driven applications
|
|
EKMB1100101
|
1Mb/4P |
Low current consumption for battery-driven applications
|
|
EKMB1100101K
|
1Mb/4P |
Low current consumption for battery-driven applications
|
|
EKMB1100102
|
1Mb/4P |
Low current consumption for battery-driven applications
|
|
EKMB1100102K
|
1Mb/4P |
Low current consumption for battery-driven applications
|
|
EKMB1100103
|
1Mb/4P |
Low current consumption for battery-driven applications
|
|
EKMB1100103K
|
1Mb/4P |
Low current consumption for battery-driven applications
|
|
EKMB1100110
|
1Mb/4P |
Low current consumption for battery-driven applications
|
|
EKMB1100110K
|
1Mb/4P |
Low current consumption for battery-driven applications
|
|
EKMB1100111
|
1Mb/4P |
Low current consumption for battery-driven applications
|
|
EKMB1100111K
|
1Mb/4P |
Low current consumption for battery-driven applications
|
|
EKMB1100112
|
1Mb/4P |
Low current consumption for battery-driven applications
|
|
EKMB1100112K
|
1Mb/4P |
Low current consumption for battery-driven applications
|
|
EKMB1100113
|
1Mb/4P |
Low current consumption for battery-driven applications
|
|
EKMB1100113K
|
1Mb/4P |
Low current consumption for battery-driven applications
|
|
EKMB1101111
|
1Mb/6P |
Passive Infrared Motion Sensor
|
|
EKMB1101111
|
763Kb/8P |
High-sensitive human detection sensor with built-in amp.
|
|
EKMB1101112
|
1Mb/6P |
Passive Infrared Motion Sensor
|
French ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand