| Fabricant | No de pièce | Fiches technique | Description |
Seme LAB |
BUY50
|
11Kb/1P |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
|
Inchange Semiconductor ... |
BUY52A
|
213Kb/2P |
isc Silicon NPN Power Transistor
|
New Jersey Semi-Conduct... |
BUY52A
|
74Kb/2P |
Silicon NPN Power Transistor
|
SunLED Corporation |
BUY53D
|
176Kb/4P |
T-1 3/4 (5mm) BLINKING LED LAMP
|
New Jersey Semi-Conduct... |
BUY56
|
79Kb/2P |
Silicon NPN Power Transistor
|
Inchange Semiconductor ... |
BUY56
|
192Kb/2P |
Collector-Emitter Breakdown Voltage-: V(BR)CEO= 160V(Min.)
|
Solitron Devices Inc. |
BUY56
|
353Kb/2P |
PRO-ELECTRON POWER TRANSISTORS
|
Seme LAB |
BUY57
|
11Kb/1P |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
|
New Jersey Semi-Conduct... |
BUY57
|
80Kb/2P |
Silicon NPN Power Transistor
|
Inchange Semiconductor ... |
BUY57
|
192Kb/2P |
Collector-Emitter Breakdown Voltage-: V(BR)CEO= 125V(Min.)
|
Solitron Devices Inc. |
BUY57
|
353Kb/2P |
PRO-ELECTRON POWER TRANSISTORS
|
Seme LAB |
BUY58
|
14Kb/1P |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
|
New Jersey Semi-Conduct... |
BUY58
|
81Kb/2P |
Silicon NPN Power Transistor
|
Inchange Semiconductor ... |
BUY58
|
192Kb/2P |
Collector-Emitter Breakdown Voltage-: V(BR)CEO= 160V(Min.)
|
Solitron Devices Inc. |
BUY58
|
353Kb/2P |
PRO-ELECTRON POWER TRANSISTORS
|
Infineon Technologies A... |
BUY06CS23K-01
|
702Kb/10P |
60V Radiation Hard power MOSFET
May 2021 |
|
BUY06CS23K-01ES
|
702Kb/10P |
60V Radiation Hard power MOSFET
May 2021 |
|
BUY06CS23K-01P
|
702Kb/10P |
60V Radiation Hard power MOSFET
May 2021 |
Seme LAB |
BUY11
|
11Kb/1P |
Bipolar NPN Device
|
|
BUY12
|
16Kb/1P |
Bipolar NPN Device in a Hermetically sealed TO3
|
French ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand