| Fabricant | No de pièce | Fiches technique | Description |
Microsemi Corporation |
APT19F100J
|
274Kb/4P |
N-Channel FREDFET
|
|
APT19F100J
|
135Kb/4P |
N-Channel FREDFET
|
|
APT19M120J
|
278Kb/4P |
N-Channel MOSFET
|
|
APT19M120J
|
139Kb/4P |
N-Channel MOSFET
|
|
APT19M120J
|
139Kb/4P |
N-Channel MOSFET
|
Inchange Semiconductor ... |
APT100-101DN
|
326Kb/2P |
isc N-Channel MOSFET Transistor
|
Advanced Power Technolo... |
APT1001
|
35Kb/2P |
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
|
|
APT1001
|
50Kb/4P |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
Inchange Semiconductor ... |
APT1001R1AN
|
309Kb/2P |
isc N-Channel MOSFET Transistor
|
Advanced Power Technolo... |
APT1001R1AVR
|
68Kb/4P |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
|
|
APT1001R1BN
|
52Kb/4P |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
Inchange Semiconductor ... |
APT1001R1BN
|
359Kb/2P |
isc N-Channel MOSFET Transistor
|
|
APT1001R1BNR
|
371Kb/2P |
isc N-Channel MOSFET Transistor
|
Advanced Power Technolo... |
APT1001R1BVFR
|
70Kb/4P |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Inchange Semiconductor ... |
APT1001R1DN
|
326Kb/2P |
isc N-Channel MOSFET Transistor
|
|
APT1001R1GN
|
331Kb/2P |
isc N-Channel MOSFET Transistor
|
|
APT1001R1HN
|
297Kb/2P |
isc N-Channel MOSFET Transistor
|
Advanced Power Technolo... |
APT1001R1HVR
|
66Kb/4P |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Inchange Semiconductor ... |
APT1001R2AN
|
309Kb/2P |
isc N-Channel MOSFET Transistor
|
|
APT1001R2BN
|
359Kb/2P |
isc N-Channel MOSFET Transistor
|
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