| Fabricant | No de pièce | Fiches technique | Description |
NEC |
2SC2148
|
52Kb/8P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
New Jersey Semi-Conduct... |
2SC2148
|
133Kb/2P |
SILICON TRANSISTR
|
Renesas Technology Corp |
2SC2148
|
180Kb/10P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
August 1996 |
NEC |
2SC2149
|
52Kb/8P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
New Jersey Semi-Conduct... |
2SC2149
|
133Kb/2P |
SILICON TRANSISTR
|
Renesas Technology Corp |
2SC2149
|
180Kb/10P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
August 1996 |
Toshiba Semiconductor |
2SC2102
|
59Kb/2P |
VHF BAND POWER AMPLIFIER APPLICATIONS.
|
|
2SC2103A
|
63Kb/2P |
VHF BAND POWER AMPLIFIER APPLICATIONS.
|
|
2SC2104
|
62Kb/2P |
UHF BAND POWER AMPLIFIER APPLICATIONS.
|
|
2SC2105
|
56Kb/2P |
UHF BAND POWER AMPLIFIER APPLICATIONS.
|
|
2SC2106
|
60Kb/2P |
UHF BAND POWER AMPLIFIER APPLICATIONS.
|
|
2SC2117
|
55Kb/2P |
VHF BAND POWER AMPLIFIER APPLICATIONS.
|
|
2SC2118
|
72Kb/2P |
VHF BAND POWER AMPLIFIER APPLICATIONS
|
|
2SC2120
|
135Kb/2P |
TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS)
|
List of Unclassifed Man... |
2SC2120
|
41Kb/1P |
Medium Power Amplifiers and Switches
|
Toshiba Semiconductor |
2SC2120
|
313Kb/3P |
Silicon NPN Epitaxial Type (PCT process)
|
Dc Components |
2SC2120
|
215Kb/1P |
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
|
SeCoS Halbleitertechnol... |
2SC2120
|
282Kb/2P |
NPN Type Plastic Encapsulate Transistors
|
|
2SC2120
|
135Kb/2P |
NPN Plastic Encapsulated Transistor
|
Tiger Electronic Co.,Lt... |
2SC2120
|
242Kb/2P |
TO-92 Plastic-Encapsulate Transistors (NPN)
|
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