| Fabricant | No de pièce | Fiches technique | Description |
Seme LAB |
2N4112
|
14Kb/1P |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
|
Inchange Semiconductor ... |
2N4112
|
256Kb/2P |
isc Silicon NPN Power Transistor
|
Seme LAB |
2N4113
|
11Kb/1P |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
|
Inchange Semiconductor ... |
2N4113
|
257Kb/2P |
isc Silicon NPN Power Transistor
|
Seme LAB |
2N4114
|
12Kb/1P |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
|
Inchange Semiconductor ... |
2N4114
|
256Kb/2P |
isc Silicon NPN Power Transistor
|
New Jersey Semi-Conduct... |
2N4115
|
143Kb/1P |
NPN POWER TRANSISTORS
|
Calogic, LLC |
2N4117
|
21Kb/1P |
N-Channel JFET General Purpose Amplifier
|
RHOPOINT COMPONENTS |
2N4117
|
363Kb/17P |
N-Channel Silicon Junction Field-Effect Transistor
|
Intersil Corporation |
2N4117
|
4Mb/122P |
P-CHANNEL JFET
|
New Jersey Semi-Conduct... |
2N4117
|
173Kb/1P |
N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS
|
Micross Components |
2N4117
|
294Kb/1P |
an Ultra-High Input Impedance N-Channel JFET
|
InterFET Corporation |
2N4117
|
97Kb/1P |
N-Channel Silicon Junction Field-Effect Transistor
|
Calogic, LLC |
2N4117
|
33Kb/1P |
N-Channel JFET General Purpose Amplifier
|
|
2N4117-19-A
|
33Kb/1P |
N-Channel JFET General Purpose Amplifier
|
|
2N4117A
|
21Kb/1P |
N-Channel JFET General Purpose Amplifier
|
Linear Integrated Syste... |
2N4117A
|
14Kb/1P |
ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET
|
Vishay Siliconix |
2N4117A
|
61Kb/5P |
N-Channel JFETs
28-Jun-04 |
RHOPOINT COMPONENTS |
2N4117A
|
363Kb/17P |
N-Channel Silicon Junction Field-Effect Transistor
|
New Jersey Semi-Conduct... |
2N4117A
|
173Kb/1P |
N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS
|
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