| Fabricant | No de pièce | Fiches technique | Description |
Seme LAB |
2N3680DCSM
|
15Kb/1P |
Dual Bipolar NPN Devices in a hermetically sealed
|
List of Unclassifed Man... |
2N3684A
|
221Kb/2P |
N-CHANNEL JUNCTION FET
|
Calogic, LLC |
2N3685
|
76Kb/1P |
N CHANNEL JFET LOW NOISE AMPLIFIER
|
Intersil Corporation |
2N3685
|
4Mb/122P |
P-CHANNEL JFET
|
Calogic, LLC |
2N3686
|
76Kb/1P |
N CHANNEL JFET LOW NOISE AMPLIFIER
|
Intersil Corporation |
2N3686
|
4Mb/122P |
P-CHANNEL JFET
|
Calogic, LLC |
2N3687
|
76Kb/1P |
N CHANNEL JFET LOW NOISE AMPLIFIER
|
Intersil Corporation |
2N3687
|
4Mb/122P |
P-CHANNEL JFET
|
List of Unclassifed Man... |
2N3688
|
2Mb/6P |
GERMANIUM PNP TRANSISTORS
|
STMicroelectronics |
2N3600
|
115Kb/5P |
HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS
Nov 1988 |
List of Unclassifed Man... |
2N3600
|
2Mb/6P |
GERMANIUM PNP TRANSISTORS
|
New Jersey Semi-Conduct... |
2N3613
|
95Kb/1P |
GE PNP POWER BJT
|
|
2N3614
|
73Kb/1P |
GE PNP POWER BJT
|
Motorola, Inc |
2N3615
|
267Kb/4P |
PNP germanium power transistors for switching and amplifier applications.
|
|
2N3616
|
267Kb/4P |
PNP germanium power transistors for switching and amplifier applications.
|
|
2N3617
|
267Kb/4P |
PNP germanium power transistors for switching and amplifier applications.
|
|
2N3618
|
267Kb/4P |
PNP germanium power transistors for switching and amplifier applications.
|
Vishay Siliconix |
2N3631
|
64Kb/1P |
depletion-type H n-charlnel MOSFET designed for
1977 |
Microsemi Corporation |
2N3632
|
609Kb/5P |
RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND
|
List of Unclassifed Man... |
2N3632
|
245Kb/3P |
silicon transistors UHF/VHF power transistors
|
French ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand