02L-AE3-R Fiches technique, PDF

Fabricant	No de pièce	Fiches technique	Description
Unisonic Technologies	2N7002L-AE3-R	148Kb/6P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
	UDN302L-AE3-R	206Kb/4P	P-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET
	UDN302L-AE3-R	206Kb/4P	P-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET
VBsemi Electronics Co.,...	UDN302L-AE3-R	502Kb/9P	P-Channel 30 V (D-S) MOSFET
Unisonic Technologies	UML2502L-AE3-R	219Kb/4P	N-CHANNEL POWER MOSFET
	UML2502L-AE3-R	219Kb/4P	N-CHANNEL POWER MOSFET
	UT2302L-AE3-R	178Kb/5P	N-CHANNEL ENHANCEMENT MODE
	UT2302L-AE3-R	275Kb/5P	N-CHANNEL ENHANCEMENT MODE
VBsemi Electronics Co.,...	UT2302L-AE3-R	1Mb/9P	N-Channel 20 V (D-S) MOSFET
Unisonic Technologies	UT6302L-AE3-R	238Kb/6P	P-CHANNEL ENHANCEMENT MOSFET
VBsemi Electronics Co.,...	UT6302L-AE3-R	472Kb/9P	P-Channel 20-V (D-S) MOSFET
Unisonic Technologies	UT6402L-AE3-R	236Kb/5P	N-CHANNEL ENHANCEMENT MODE
VBsemi Electronics Co.,...	UT6402L-AE3-R	492Kb/9P	N-Channel 30-V (D-S) MOSFET
Unisonic Technologies	UTR4502L-AE3-R	223Kb/4P	-1.95 Amps, -30 Volts P-CHANNEL POWER MOSFET
VBsemi Electronics Co.,...	UTR4502L-AE3-R	491Kb/9P	P-Channel 30 V (D-S) MOSFET

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