Index   PXAC241002FC-V1-R2(1) Résultats de recherche (s) pour. Données correspondantes, Données similaires  PXAC241002FC-V1-R2(1) commençant par   No Data terminant par   No Data incluant   No Data Fabricant

Fabricant No de pièce Fiches technique Description Cree, Inc PXAC241002FC-V1-R2 279Kb/8P Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz Search Partnumber : Start with "PXAC241002FC-V1-R2" - Total : 59 ( 1/3 Page) Cree, Inc PXAC241002FC-V1-R0 279Kb/8P Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz PXAC241002FCV1R0 279Kb/8P Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz PXAC241002FCV1R2 279Kb/8P Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz PXAC241002FC 279Kb/8P Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz Infineon Technologies A... PXAC241702FC 1Mb/10P Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22 Cree, Inc PXAC241702FC 577Kb/10P Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Infineon Technologies A... PXAC241702FCV1R0 1Mb/10P Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22 PXAC241702FCV1R0XTMA1 1Mb/10P Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22 PXAC241702FCV1R250 1Mb/10P Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22 PXAC241702FCV1R250XTMA1 1Mb/10P Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22 Cree, Inc PXAC243502FV 543Kb/10P High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Infineon Technologies A... PXAC243502FV 1Mb/10P High Power RF LDMOS Field Effect Transistor Rev. 03.1, 2015-04-13 PXAC243502FVV1R0 1Mb/10P High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22 PXAC243502FVV1R0XTMA1 1Mb/10P High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22 PXAC243502FVV1R250 1Mb/10P High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22 PXAC243502FVV1R250XTMA1 1Mb/10P High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22 PXAC243502FV 1Mb/10P High Power RF LDMOS Field Effect Transistor Rev. 03.1, 2015-04-13 PXAC243502FV 1Mb/10P High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22 PXAC200902FC 489Kb/10P Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 ??2170 MHz Rev. 02.1, 2016-02-11

PXAC241002FC-V1-R2 Fiches technique, PDF [revendeur]

revendeur No de pièce Fabricant Fiches technique Description Buy Now Element14 PXA980 BULGIN LIMITED CABLE GLAND PACK, 14-20MM, IP68; Kit Contents:3 Pieces of size 18-20mm, 16-18 and 14-16mm Diameter C... PXA911/04/S BULGIN LIMITED CIRCULAR CONNECTOR, RECEPTACLE, 4 POSITION, CABLE; Connector Type:Circular Industrial; Product Range...

PXAC241002FC-V1-R2 revendeur