| Fabricant | No de pièce | Fiches technique | Description |
Renesas Technology Corp |
NX6351GP
|
266Kb/7P
|
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
|
| Search Partnumber :
Start with "NX6351GP_15" -
Total : 55 ( 1/3 Page) |
Renesas Technology Corp |
NX6351GP27
|
833Kb/7P |
LASER DIODE
Feb 25, 2013 |
California Eastern Labs |
NX6351GP27-AZ
|
938Kb/6P |
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
|
Renesas Technology Corp |
NX6351GP29
|
833Kb/7P |
LASER DIODE
Feb 25, 2013 |
California Eastern Labs |
NX6351GP29-AZ
|
938Kb/6P |
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
|
Renesas Technology Corp |
NX6351GP31
|
833Kb/7P |
LASER DIODE
Feb 25, 2013 |
California Eastern Labs |
NX6351GP31-AZ
|
938Kb/6P |
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
|
Renesas Technology Corp |
NX6351GP33
|
833Kb/7P |
LASER DIODE
Feb 25, 2013 |
California Eastern Labs |
NX6351GP33-AZ
|
938Kb/6P |
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
|
Renesas Technology Corp |
NX6351GP35
|
833Kb/7P |
LASER DIODE
Feb 25, 2013 |
California Eastern Labs |
NX6351GP35-AZ
|
938Kb/6P |
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
|
Renesas Technology Corp |
NX6351GP
|
833Kb/7P |
LASER DIODE
Feb 25, 2013 |
California Eastern Labs |
NX6351GP
|
938Kb/6P |
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
|
|
NX6350EP
|
1,013Kb/6P |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
Renesas Technology Corp |
NX6350EP
|
702Kb/7P |
LASER DIODE
Aug 14, 2012 |
|
NX6350EP27
|
702Kb/7P |
LASER DIODE
Aug 14, 2012 |
California Eastern Labs |
NX6350EP27-AZ
|
1,013Kb/6P |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
Renesas Technology Corp |
NX6350EP29
|
702Kb/7P |
LASER DIODE
Aug 14, 2012 |
California Eastern Labs |
NX6350EP29-AZ
|
1,013Kb/6P |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
Renesas Technology Corp |
NX6350EP31
|
702Kb/7P |
LASER DIODE
Aug 14, 2012 |
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