| Fabricant | No de pièce | Fiches technique | Description |
Intersil Corporation |
IRFF320
|
325Kb/7P
|
2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET
|
International Rectifier |
IRFF320
|
135Kb/7P
|
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
|
| Search Partnumber :
Start with "IRFF320" -
Total : 91 ( 1/5 Page) |
Nell Semiconductor Co.,... |
IRFF30
|
434Kb/7P |
N-Channel Power MOSFET
|
Seme LAB |
IRFF310
|
16Kb/1P |
N-Channel MOSFET in a Hermetically sealed TO39
|
International Rectifier |
IRFF310
|
129Kb/7P |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?쏷RANSISTORS THRU-HOLE (TO-205AF)
|
Intersil Corporation |
IRFF310
|
326Kb/7P |
1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET
|
New Jersey Semi-Conduct... |
IRFF310
|
1,003Kb/3P |
1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET
|
|
IRFF330
|
1,005Kb/3P |
3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
|
Intersil Corporation |
IRFF330
|
326Kb/7P |
3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
|
Seme LAB |
IRFF330
|
16Kb/1P |
N-Channel MOSFET in a Hermetically sealed TO39
|
International Rectifier |
IRFF024
|
132Kb/7P |
60V, N-CHANNEL
|
Seme LAB |
IRFF024
|
16Kb/1P |
N-Channel MOSFET in a Hermetically sealed TO39
|
|
IRFF034
|
15Kb/1P |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package
|
|
IRFF110
|
16Kb/1P |
N-Channel MOSFET in a Hermetically sealed TO39
|
New Jersey Semi-Conduct... |
IRFF110
|
474Kb/2P |
IM-CHANIMEL POWER MOSFETs TO-39 PACKAGE
|
GE Solid State |
IRFF110
|
176Kb/5P |
Power MOS Field-Effect Transistors
|
Intersil Corporation |
IRFF110
|
328Kb/7P |
3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET
|
New Jersey Semi-Conduct... |
IRFF111
|
474Kb/2P |
IM-CHANIMEL POWER MOSFETs TO-39 PACKAGE
|
GE Solid State |
IRFF111
|
176Kb/5P |
Power MOS Field-Effect Transistors
|
|
IRFF112
|
176Kb/5P |
Power MOS Field-Effect Transistors
|
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