Fabricant | No de pièce | Fiches technique | Description |
Chicago Miniature Lamp,... |
CM45
|
218Kb/1P
|
T-3 1/4 Miniature Bayonet Base
|
Bourns Electronic Solut... |
CM45
|
419Kb/7P
|
SMT Chip Inductors
|
CM45
|
449Kb/9P
|
SMT Chip Inductors
|
Visual Communications C... |
CM45
|
52Kb/1P
|
Miniature Bayonet Base
|
New Jersey Semi-Conduct... |
CM45-12A
|
46Kb/1P
|
NPN SILICON RF POWER TRANSISTOR
|
Advanced Semiconductor |
CM45-28
|
15Kb/1P
|
NPN SILICON RF POWER TRANSISTOR
|
Mitsubishi Electric Sem... |
CM450DX-24A
|
131Kb/7P
|
IGBT MODULES HIGH POWER SWITCHING USE
|
CM450DX-24S
|
569Kb/9P
|
HIGH POWER SWITCHING USE INSULATED TYPE
|
Powerex Power Semicondu... |
CM450DX-24S
|
1Mb/9P
|
Dual IGBT NX-Series Module 450 Amperes/1200 Volts
|
Mitsubishi Electric Sem... |
CM450DX-24S1
|
745Kb/10P
|
HIGH POWER SWITCHING USE INSULATED TYPE
|
Powerex Power Semicondu... |
CM450DX-34SA
|
1Mb/9P
|
Dual IGBT NX-Series Module 450 Amperes/1700 Volts
|
CM450DXL-34SA
|
1Mb/9P
|
Dual IGBT NX-Series Module 450 Amperes/1700 Volts
|
Mitsubishi Electric Sem... |
CM450DY-24S
|
589Kb/9P
|
HIGH POWER SWITCHING USE INSULATED TYPE
|
Powerex Power Semicondu... |
CM450DY-24S
|
885Kb/6P
|
Powerex Dual IGBTMOD Modules are designed for use in switching applications.
|
Mitsubishi Electric Sem... |
CM450HA-5F
|
44Kb/4P
|
HIGH POWER SWITCHING USE INSULATED TYPE
|
Powerex Power Semicondu... |
CM450HA-5F
|
77Kb/4P
|
Trench Gate Design Single IGBTMOD??450 Amperes/250 Volts
|
Mitsubishi Electric Sem... |
CM450HA-5F
|
51Kb/4P
|
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
CM450HA-5F
|
51Kb/4P
|
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
ABC Taiwan Electronics ... |
CM4532100KL
|
583Kb/8P
|
WOUND CHIP INDUCTOR
|
CM4532101KL
|
583Kb/8P
|
WOUND CHIP INDUCTOR
|