| Fabricant | No de pièce | Fiches technique | Description |
 Siemens Semiconductor G... |
BSS 97
|
231Kb/6P
|
Small-Signal Transistor
|
 Turck, Inc. |
BSS-08
|
382Kb/3P
|
Inductive sensor
|
|
BSS-08
|
377Kb/3P
|
Inductive sensor
|
|
BSS-08
|
652Kb/3P
|
Inductive Sensor – With Increased Switching Distance
|
|
BSS-12
|
315Kb/3P
|
Inductive sensor
2015-10-24
|
|
BSS-18
|
297Kb/3P
|
Inductive sensor
|
|
BSS-30
|
381Kb/4P
|
Inductive sensor
|
|
BSS-30
|
395Kb/4P
|
Inductive sensor With extended temperature range
|
|
BSS-30
|
302Kb/3P
|
Inductive sensor
|
|
BSS-30
|
348Kb/4P
|
Inductive sensor With extended temperature range
|
|
BSS-30
|
366Kb/3P
|
Inductive sensor
|
|
BSS-CP40
|
269Kb/3P
|
Inductive sensor
|
|
BSS-CP40
|
276Kb/3P
|
Inductive sensor
|
|
BSS-CP40
|
309Kb/2P
|
Capacitive sensor
2017-09
|
 Siemens Semiconductor G... |
BSS100
|
79Kb/7P
|
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
|
 Fairchild Semiconductor |
BSS100
|
284Kb/10P
|
N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
 Siemens Semiconductor G... |
BSS101
|
79Kb/7P
|
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
|
 NXP Semiconductors |
BSS110
|
76Kb/9P
|
P-channel enhancement mode vertical D-MOS transistor
1995 Apr 07
|
 Siemens Semiconductor G... |
BSS110
|
80Kb/7P
|
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)
|
 Fairchild Semiconductor |
BSS110
|
285Kb/10P
|
P-Channel Enhancement Mode Field Effect Transistor
|