| Fabricant | No de pièce | Fiches technique | Description |
 NXP Semiconductors |
BAX12
|
39Kb/8P
|
Controlled avalanche diode
1996 Sep 17
|
 EIC discrete Semiconduc... |
BAX12
|
116Kb/2P
|
CONTROLLED AVALANCHE DIODES
|
 New Jersey Semi-Conduct... |
BAX12
|
181Kb/2P
|
Controlled avalanche diode
|
 SUNMATE electronic Co.,... |
BAX12
|
485Kb/2P
|
CONTROLLED AVALANCHE DIODES
|
 EIC discrete Semiconduc... |
BAX12A
|
116Kb/2P
|
CONTROLLED AVALANCHE DIODES
|
 SUNMATE electronic Co.,... |
BAX12A
|
485Kb/2P
|
CONTROLLED AVALANCHE DIODES
|
 Fairchild Semiconductor |
BAX13
|
30Kb/1P
|
High Speed Switching Diode
|
 NXP Semiconductors |
BAX14
|
37Kb/7P
|
General purpose diode
1996 Sep 17
|
 SynSemi, Inc. |
BAX14
|
30Kb/2P
|
SWITCHING DIODE
|
 EIC discrete Semiconduc... |
BAX14
|
35Kb/2P
|
SWITCHING DIODE
|
 ON Semiconductor |
BAX16
|
525Kb/6P
|
High Voltage General Purpose Diode
April 2008 Rev. 1.0.0
|
 Fairchild Semiconductor |
BAX16
|
36Kb/1P
|
General Purpose Industrial Diode
|
 ON Semiconductor |
BAX16TR
|
525Kb/6P
|
High Voltage General Purpose Diode
April 2008 Rev. 1.0.0
|
 Fairchild Semiconductor |
BAX16
|
426Kb/4P
|
High Voltage General Purpose Diode
|
 New Jersey Semi-Conduct... |
BAX17
|
133Kb/1P
|
D0-35
|
 NXP Semiconductors |
BAX18
|
32Kb/7P
|
General purpose diode
1996 Sep 18
|
 SynSemi, Inc. |
BAX18
|
30Kb/2P
|
SWITCHING DIODE
|
 EIC discrete Semiconduc... |
BAX18
|
69Kb/2P
|
SWITCHING DIODE
|
 Siemens Semiconductor G... |
BAX280
|
35Kb/3P
|
FRED Diode (VRRM 1000 V IFRMS 5.5 A 55 ns Soft recovery characteristics)
|
 Rohm |
BAXXBC0
|
490Kb/19P
|
1A Variable/Fixed Output LDO Regulators
|