DMN1008UFDF datasheet(2/7 Pages) DIODES

2 / 7 page

DMN1008UFDF

Datasheet number: DS38322 Rev. 2 - 2

2 of 7

www.diodes.com

October 2017

DMN1008UFDF

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±8

Continuous Drain Current, VGS = 4.5V (Note 6)

Steady

State

TA = +25°C

TA = +70°C

12.2

9.8

Pulsed Drain Current (380

μs Pulse, Duty Cycle = 1%)

IDM

Continuous Source-Drain Diode Current (Note 6)

TA = +25°C

1.8

Avalanche Current, L = 0.1mH (Note 7)

IAS

16.4

Avalanche Energy, L = 0.1mH (Note 7)

EAS

13.5

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

0.7

TA = +70°C

0.4

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

RθJA

168

°C/W

Total Power Dissipation (Note 6)

TA = +25°C

1.7

TA = +70°C

1.0

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

RθJA

°C/W

Thermal Resistance, Junction to Case (Note 6)

RθJC

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

µA

VDS = 9.6V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±8V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

0.3

—

1.0

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

6.6

Ω

VGS = 4.5V, ID = 5A

7.6

VGS = 3.0V, ID = 5A

8.5

12.5

VGS = 2.5V, ID = 5A

Diode Forward Voltage

VSD

—

0.7

1.2

VGS = 0V, IS = 5A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

995

—

VDS = 6V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

305

—

Reverse Transfer Capacitance

Crss

—

270

—

Gate Resistance

—

1.5

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

—

13.6

—

VDS = 6V, ID = 5A

Total Gate Charge (VGS = 8V)

—

23.4

—

Gate-Source Charge

Qgs

—

1.3

—

Gate-Drain Charge

Qgd

—

3.3

—

Turn-On Delay Time

tD(ON)

—

3.5

—

VDS = 6V, VGS = 4.5V,

RG = 2Ω, ID = 5A

Turn-On Rise Time

—

6.6

—

Turn-Off Delay Time

tD(OFF)

—

17.5

—

Turn-Off Fall Time

—

7.5

—

Reverse Recovery Time

tRR

—

IF = 5A, di/dt = 200A/μs

Reverse Recovery Charge

QRR

—

IF = 5A, di/dt = 200A/μs

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

DMN1008UFDF Fiches technique(PDF) 2 Page - Diodes Incorporated

DMN1008UFDF Fiches technique(HTML) 2 Page - Diodes Incorporated

Html Pages

1 2 3 4 5 6 7

Fiches technique Télécharger

Lien URL