| Moteur de recherche de fiches techniques de composants électroniques |
|
IXFN100N20 Fiches technique(PDF) 1 Page - IXYS Corporation |
|
|
|||||||||||||||||||||||||||||
IXFN100N20 Fiches technique(HTML) 1 Page - IXYS Corporation |
|
1 / 4 page ![]() 1 - 4 © 2000 IXYS All rights reserved Symbol Test Conditions Maximum Ratings IXFK IXFN IXFN 90N20 100N20 106N20 V DSS T J = 25 °C to 150°C 200 200 200 V V DGR T J = 25 °C to 150°C; R GS = 1 MW 200 200 200 V V GS Continuous ±20 ±20 20 V V GSM Transient ±30 ±30 20 V I D25 T C = 25 °C, Chip capability 90 100 106 A I D80 T C = 80 °C, limited by external leads 76 - A I DM T C = 25 °C, pulse width limited by T JM 360 400 424 A I AR T C = 25 °C50 50 A E AR T C = 25 °C 30 30 30 mJ dv/dt I S £ I DM, di/dt £ 100 A/ms, VDD £ VDSS, 5 5 5 V/ns T J £ 150°C, RG = 2 W P D T C = 25 °C 500 520 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6 mm (0.063 in) from case for 10 s 300 - °C V ISOL 50/60 Hz, RMS t = 1 min - 2500 V~ I ISOL £ 1 mA t = 1 s - 3000 V~ M d Mounting torque 0.9/6 1.5/13 Nm/lb.in. Terminal connection torque - 1.5/13 Nm/lb.in. Weight 10 30 g HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr Features l International standard packages q JEDEC TO-264 AA, epoxy meet UL94V-0, flammability classification q miniBLOC with Aluminium nitride isolation q Low R DS (on) HDMOS TM process q Rugged polysilicon gate cell structure q Unclamped Inductive Switching (UIS) rated q Low package inductance q Fast intrinsic Rectifier Applications q DC-DC converters q Synchronous rectification q Battery chargers q Switched-mode and resonant-mode power supplies q DC choppers q Temperature and lighting controls q Low voltage relays Advantages q Easy to mount q Space savings q High power density Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSS V GS = 0 V, ID = 1 mA 200 V V GH(th) V DS = V GS, ID = 8 mA 2 4 V I GSS V GS = ±20 VDC, VDS = 0 ±200 nA I DSS V DS = 0.8 • V DSS T J = 25°C 400 mA V GS = 0 V T J = 125°C2 mA R DS(on) V GS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, IXFK90N20 0.023 W duty cycle d £ 2 % IXFN100N20 0.023 W IXFN106N20 0.020 W TO-264 AA (IXFK) S G D D S G S G = Gate D = Drain S = Source TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source S G S D 92804H (7/97) miniBLOC, SOT-227 B (IXFN) E153432 (TAB) V DSS I D25 R DS(on) IXFK 90 N 20 200 V 90 A 23 m W IXFN 100 N 20 200 V 100 A 23 m W IXFN 106 N 20 200 V 106 A 20 m W t rr £ 200 ns TO-264 AA IXYS reserves the right to change limits, test conditions, and dimensions. |
Numéro de pièce similaire - IXFN100N20 |
|
Description similaire - IXFN100N20 |
|
|
|
Lien URL |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Lien vers la fiche technique | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |