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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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AT975 Fiches technique(PDF) 1 Page - Power Semiconductors |
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AT975 Fiches technique(HTML) 1 Page - Power Semiconductors |
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1 / 6 page  PHASE CONTROL THYRISTOR AT975 Repetitive voltage up to 5200 V Mean on-state current 3263 A Surge current 60 kA FINAL SPECIFICATION Feb. 17 - Issue: 1 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 5200 V V RSM Non-repetitive peak reverse voltage 125 5300 V V DRM Repetitive peak off-state voltage 125 5200 V I RRM Repetitive peak reverse current V=VRRM 125 300 mA I DRM Repetitive peak off-state current V=VDRM 125 300 mA CONDUCTING I T (AV) Mean on-state current 180° sin, 50 Hz, Th=55°C, double side cooled 3263 A I T (AV) Mean on-state current 180° sin, 50 Hz, Tc=85°C, double side cooled 2592 A I TSM Surge on-state current sine wave, 10 ms 125 60,0 kA I² t I² t without reverse voltage 18000 x1E3 A²s V T On-state voltage On-state current = 7850 A 25 2,30 V V T(TO) Threshold voltage 125 1,07 V r T On-state slope resistance 125 0,190 mohm SWITCHING di/dt Critical rate of rise of on-state current, min. From 67% VDRM, gate 10V 5ohm 125 200 A/µs dv/dt Critical rate of rise of off-state voltage, min. Linear ramp up to 67% of VDRM 125 1000 V/µs td Gate controlled delay time, typical VD=100V, gate source 10V, 10 ohm , tr=5 µs 25 . µs tq Circuit commutated turn-off time, typical dv/dt = 20 V/µs linear up to 75% VDRM 400 µs Q RR Reverse recovery charge di/dt=-20 A/µs, I= 2150 A 125 . µC I RR Peak reverse recovery current VR= 50 V . A I H Holding current, typical VD=5V, gate open circuit 25 500 mA I L Latching current, typical VD=12V, tp=50µs 25 1500 mA GATE V GT Gate trigger voltage VD=12V 25 2,5 V I GT Gate trigger current VD=12V 25 250 mA V GD Non-trigger gate voltage, min. VD=67%VDRM 125 0,25 V V FGM Peak gate voltage (forward) 10 V I FGM Peak gate current 10 A V RGM Peak gate voltage (reverse) 10 V P GM Peak gate power dissipation Pulse width 100 µs 150 W P G Average gate power dissipation 3 W MOUNTING R th(j-c) Thermal impedance, DC Junction to case, double side cooled 6,0 °C/kW R th(c-h) Thermal impedance Case to heatsink, double side cooled 1,5 °C/kW T j Operating junction temperature -30 / 125 °C F Mounting force 80.0 / 100.0 kN Mass 3000 g ORDERING INFORMATION : AT975 S 52 standard specification VDRM&VRRM/100 POSEICO SPA Via Pillea 42-44, 16153 Genova - ITALY Tel. + 39 010 8599400 - Fax + 39 010 8682006 Sales Office: Tel. + 39 010 8599400 - sales@poseico.com Page 1 of 6 |
Numéro de pièce similaire - AT975 |
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Description similaire - AT975 |
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