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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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AT746 Fiches technique(PDF) 1 Page - Power Semiconductors |
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AT746 Fiches technique(HTML) 1 Page - Power Semiconductors |
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1 / 4 page  PHASE CONTROL THYRISTOR AT746 Repetitive voltage up to 2600 V Mean forward current 1794 A Surge current 25 kA FINAL SPECIFICATION Feb. 17 - Issue: 1 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 2600 V V RSM Non-repetitive peak reverse voltage 125 2700 V V DRM Repetitive peak off-state voltage 125 2600 V I RRM Repetitive peak reverse current V=VRRM 125 100 mA I DRM Repetitive peak off-state current V=VDRM 125 100 mA CONDUCTING I T (AV) Mean forward current 180° sin, 50 Hz, Th=55°C, double side cooled 1794 A I T (AV) Mean forward current 180° sin, 50 Hz, Tc=85°C, double side cooled 1404 A I TSM Surge forward current Sine wave, 10 ms 125 25 kA I² t I² t without reverse voltage 3125 x 10 3 A²s V T On-state voltage On-state current = 5600 A 25 2,80 V V T(TO) Threshold voltage 125 1,10 V r T On-state slope resistance 125 0,270 mohm SWITCHING di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 1800 A; gate 10V, 5 W 125 200 A/µs dv/dt Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM 125 500 V/µs t d Gate controlled delay time, typical VD=100V; gate source 25V, 10 W , tr=.5 µs 25 1 µs t q Circuit commutated turn-off time, typical dv/dt = 20 V/µs linear up to 75% VDRM 350 µs Q rr Reverse recovery charge di/dt = -20 A/µs, I= 1500 A 125 µC I rr Peak reverse recovery current VR= 50 V A I H Holding current, typical VD=5V, gate open circuit 25 500 mA I L Latching current, typical VD=5V, tp=30µs 25 2 mA GATE V GT Gate trigger voltage VD=5V 25 3,50 V I GT Gate trigger current VD=5V 25 300 mA V GD Non-trigger gate voltage, min. VD=VDRM 125 0,25 V V FGM Peak gate voltage (forward) 30 V I FGM Peak gate current 10 A V RGM Peak gate voltage (reverse) 5 V P GM Peak gate power dissipation Pulse width 100 µs 150 W P G Average gate power dissipation 2 W MOUNTING R th(j-h) Thermal impedance, DC Junction to heatsink, double side cooled 17,0 °C/kW R th(c-h) Thermal impedance Case to heatsink, double side cooled 3,0 °C/kW T j Operating junction temperature -30 / 125 °C F Mounting force 40,0 / 50,0 kN Mass 1000 g ORDERING INFORMATION : AT746 S 26 standard specification VRRM/100 POSEICO SPA Via Pillea 42-44, 16153 Genova - ITALY Tel. + 39 010 8599400 - Fax + 39 010 8682006 Sales Office: Tel. + 39 010 8599400 - sales@poseico.com |
Numéro de pièce similaire - AT746 |
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Description similaire - AT746 |
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