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TC58FVM5B2AXB65 Fiches technique(PDF) 21 Page - Toshiba Semiconductor |
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TC58FVM5B2AXB65 Fiches technique(HTML) 21 Page - Toshiba Semiconductor |
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21 / 63 page ![]() TC58FVM5(T/B)(2/3)A(FT/XB)65 2003-01-29 21/63 ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RANGE UNIT VDD VDD Supply Voltage −0.6~4.6 V VIN Input Voltage −0.6~VDD + 0.5 (≤ 4.6) (1) V VDQ Input/Output Voltage −0.6~VDD + 0.5 (≤ 4.6) (1) V VIDH Maximum Input Voltage for A9, OE and RESET (2) 13.0 V VACCH Maximum Input Voltage for /ACC WP (2) 10.5 V PD Power Dissipation 600 mW Tsolder Soldering Temperature (10s) 260 °C Tstg Storage Temperature −55~150 °C Topr Operating Temperature −40~85 °C IOSHORT Output Short-Circuit Current (3) 100 mA (1) This level may undershoot to −2.0 V for periods < 20 ns, and may overshoot to +2.0 V for periods < 20 ns. (2) Do not apply VID/VACC when the supply voltage is not within the device's recommended operating voltage range. (3) Outputs should be shorted for no more than one second. No more than one output should be shorted at a time. CAPACITANCE (Ta ==== 25°C, f ==== 1 MHz) TSOPI SYMBOL PARAMETER CONDITION MAX UNIT CIN Input Pin Capacitance VIN = 0 V 4 pF COUT Output Pin Capacitance VOUT = 0 V 8 pF CIN2 Control Pin Capacitance VIN = 0 V 8 pF This parameter is periodically sampled and is not tested for every device. TFBGA SYMBOL PARAMETER CONDITION MAX UNIT CIN Input Pin Capacitance VIN = 0 V 4 pF COUT Output Pin Capacitance VOUT = 0 V 8 pF CIN2 Control Pin Capacitance VIN = 0 V 9 pF This parameter is periodically sampled and is not tested for every device. RECOMMENDED DC OPERATING CONDITIONS SYMBOL PARAMETER MIN MAX UNIT VDD VDD Supply Voltage 2.3 3.6 VIH Input High-Level Voltage 0.7 × VDD VDD + 0.3 VIL Input Low-Level Voltage −0.3 0.2 × VDD VID High-Level Voltage for A9, OE and RESET 11.4 12.6 VACC High-Level Voltage for /ACC WP 8.5 9.5 V Ta Operating Temperature −40 85 °C |
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