SI4464DY datasheet(2/5 Pages) VISHAY

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Si4464DY

Vishay Siliconix

New Product

www.vishay.com

Document Number: 72051

S-22099—Rev. A, 02-Dec-02

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

2.0

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

VDS = 160 V, VGS = 0 V

Zero Gate Voltage Drain Current

IDSS

VDS = 160 V, VGS = 0 V, TJ = 55_C

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

VGS = 10 V, ID = 2.2 A

0.195

0.240

Drain-Source On-State Resistancea

rDS(on)

VGS = 6.0 V, ID = 2.1 A

0.210

0.260

Forward Transconductancea

gfs

VDS = 15 V, ID = 2.2 A

8.0

Diode Forward Voltagea

VSD

IS = 2.1 A, VGS = 0 V

0.8

1.2

Dynamicb

Total Gate Charge

Gate-Source Charge

Qgs

VDS = 100 V, VGS = 10 V, ID = 2.2 A

2.5

Gate-Drain Charge

Qgd

3.8

Gate Resistance

2.5

Turn-On Delay Time

td(on)

Rise Time

VDD = 100 V, RL = 100 W

Turn-Off Delay Time

td(off)

VDD = 100 V, RL = 100 W

ID ^ 1.0 A, VGEN = 10 V, RG = 6 W

Fall Time

Source-Drain Reverse Recovery Time

trr

IF = 2.1 A, di/dt = 100 A/ms

Notes

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0123456

VGS = 10 thru 5 V

TC = 125_C

-55

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

4 V

3 V

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